Ferroelectric memory devices and methods of using ferroelectric

Details Ferroelectric memory devices and methods of using ferroelectric Ferroelectric memory devices and methods of using ferroelectric

1997-12-09

1998-12-01

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365210, 257295, G11C 1122

Patent

active

058448314

ABSTRACT:
A ferroelectric memory device has a ferroelectric memory capacitor with a hysteresis characteristic adapted to store either a first memory content corresponding to a first polarization condition or a second memory content corresponding to a second polarization condition when there is no applied voltage. A first load capacitor is connected in series with the memory capacitor, and a second load capacitor is connected in series with a reference capacitor. The first and second capacitors are both ferroelectric capacitors and have substantially the same characteristics as the memory capacitor. The ratio of area between the reference and second capacitors is such that Veff (the partial voltage which appears across the reference capacitor if a specified voltage is applied to the series connection of the reference capacitor and the second load capacitor) is nearly equal to the average of V1 (the partial voltage which appears across the memory capacitor if the specified voltage is applied to the series connection of the memory capacitor and the first load capacitor when the memory capacitor is in the first polarization condition) and V2 (the partial voltage which appears across the memory capacitor if the specified voltage is applied to the series connection of the memory capacitor and the first load capacitor when the memory capacitor is in the second polarization condition) or slightly closer to V1 from the average.

REFERENCES:
patent: 5517445 (1996-05-01), Motomasa et al.
patent: 5621680 (1997-04-01), Newman et al.
patent: 5724283 (1998-03-01), Tai
patent: 5751626 (1998-05-01), Seyyedy

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