Ferroelectric memory devices and method for testing them

Details Ferroelectric memory devices and method for testing them Ferroelectric memory devices and method for testing them

1996-08-20

1998-05-12

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365201, G11C 1122

Patent

active

057516286

ABSTRACT:
A memory cell comprises a ferroelectric capacitor, first main memory cells are connected to a first bit line, a first reference memory cell is connected to a second bit line, second main memory cells are connected to the second bit line, and a second reference memory cell is connected to the first bit line. When a first operation mode is selected by a control circuit comprising NAND gates and NOR gates, first main memory cells and first reference memory cell are selected, and when a second operation mode is selected, first main memory cells and second main memory cells are selected. Thus, by switching the operation between the two operation modes, a ferroelectric memory device that has stable operation at a low voltage and high integration at a high voltage is provided.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5297077 (1994-03-01), Imai et al.
patent: 5392234 (1995-02-01), Hirano et al.
patent: 5430671 (1995-07-01), Hirano et al.

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