Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1992-11-05
1994-08-23
LaRoche, Eugene R.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 365175, 365210, G11C 1122
Patent
active
053413253
ABSTRACT:
A plurality of memory cells are constituted by a large number of belt-like first conductive members, a ferroelectric thin film formed on the first conductive members, and a large number of belt-like second conductive members formed on the film in a direction perpendicular to the first conductive members. A reading/writing section performs a reading/writing operation with respect to each memory cell after applying a predetermined voltage to at least memory cells other than a target memory cell to cause ferroelectric polarization corresponding to crosstalk components. A two-terminal switch integrally stacked on each of the memory cells serves to reduce dielectric polarization for the elimination of crosstalk caused in each memory cell.
REFERENCES:
patent: 2695397 (1954-11-01), Anderson
patent: 3540011 (1970-11-01), Stupp et al.
patent: 4110839 (1978-08-01), Bert et al.
patent: 4920513 (1990-04-01), Takeshita et al.
patent: 5019530 (1991-05-01), Kleinsasser et al.
patent: 5063539 (1991-11-01), Rallapalli
patent: 5086412 (1992-02-01), Jaffe et al.
Isono Yasuo
Nakano Hiroshi
Glembocki Christopher R.
LaRoche Eugene R.
Olympus Optical Co,. Ltd.
LandOfFree
Ferroelectric memory device with crosstalk protection in reading does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric memory device with crosstalk protection in reading, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory device with crosstalk protection in reading will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-507700