Static information storage and retrieval – Read/write circuit – Complementing/balancing
Reexamination Certificate
2005-03-01
2005-03-01
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Complementing/balancing
C365S145000, C365S228000, C365S189090
Reexamination Certificate
active
06862236
ABSTRACT:
A ferroelectric memory device has a function of protecting data held in memory cells from an unexpected unstable power supply voltage generated when the power is turned on or off, or when reading or writing data, and a function of reducing power consumption during reading or writing of data. The ferroelectric memory device includes a short circuit which is operated when the power is turned on or off, or after reading or writing of data occurs. The short circuit short-circuits all of a voltage supply line for a selected word line, a voltage supply line for an unselected word line, a voltage supply line for a selected bit line and a voltage supply line for an unselected bit line, or short-circuits the voltage supply line for the unselected word line and the voltage supply line for the unselected bit line.
REFERENCES:
patent: 6081461 (2000-06-01), Shirley et al.
patent: 6091644 (2000-07-01), Hsu et al.
patent: 6104653 (2000-08-01), Proebsting
patent: 6188614 (2001-02-01), Hsu et al.
patent: 6214668 (2001-04-01), Hsu et al.
patent: 6788564 (2004-09-01), Hamada
patent: A 91-116107 (1997-05-01), None
U.S. Appl. No. 10/393,439, Yamamura, filed Mar. 20, 2003.
U.S. Appl. No. 10/747,523, Maruyama, filed Dec. 30, 2003.
U.S. Appl. No. 10/737,959, Maruyama, filed Dec. 18, 2003.
U.S. Appl. No. 10/752,184, Maruyama, filed Jan. 7, 2004.
U.S. Appl. No. 10754,691, Maruyama, filed Jan. 12, 2004.
U.S. Appl. No. 10/758,179, Maruyama, filed Jan. 16, 2004.
Oliff & Berridg,e PLC
Seiko Epson Corporation
Tran Andrew Q.
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