Ferroelectric memory device with a spare memory cell array

Details Ferroelectric memory device with a spare memory cell array Ferroelectric memory device with a spare memory cell array

2006-03-21

2006-03-21

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S200000, C365S230060

Reexamination Certificate

active

07016215

ABSTRACT:
A memory device comprises a normal memory cell array and a spare memory cell array, in which memory cells each comprising a ferroelectric capacitor are arranged; a normal word line; a normal word line driver; a spare word line; a spare word line driver; an address input circuit to which an address signal is inputted; and a judging circuit which compares an input address with a faulty address and generates an output for selecting one of the normal and spare word line drivers according to the comparison. The normal and spare word line drivers are simultaneously selected by an output of the address input circuit to start driving the normal and spare word lines, and thereafter the normal and spare word line drivers are enabled by the output of the judging circuit to stop the driving of one of the normal and spare word lines and continue the other.

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