Ferroelectric memory device, method of driving the same, and...

Details Ferroelectric memory device, method of driving the same, and... Ferroelectric memory device, method of driving the same, and...

2006-11-28

2006-11-28

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S065000, C365S189090, C365S191000, C365S230060

Reexamination Certificate

active

07142445

ABSTRACT:
A ferroelectric memory device preventing an imprint and including a plurality of wordlines, a plurality of bitlines, a plurality of ferroelectric memory cells, a wordline driver which drives the wordlines, and a bitline driver which drives the bitlines. The wordline driver and the bitline driver switch an operation mode of the ferroelectric memory device to a first mode which is one of a data reading mode, a data rewriting mode and a data writing mode, by applying a voltage Vs having a first polarity to at least one ferroelectric memory cell selected from the ferroelectric memory cells. The wordline driver and the bitline driver switch the operation mode to a second mode in which the ferroelectric memory device prevents an imprint by applying a voltage (−Vs/3) having a second polarity which is the reverse of the first polarity to the selected ferroelectric memory cell, after the operation mode has been switched to the first mode at least once, the voltage of the second polarity causing no inversion of data stored in the ferroelectric memory cells.

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