Ferroelectric memory device, method for driving...

Details Ferroelectric memory device, method for driving... Ferroelectric memory device, method for driving...

2007-07-24

2009-08-18

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C326S011000, C714S797000

Reexamination Certificate

active

07577012

ABSTRACT:
A ferroelectric memory device includes: an odd number of memory regions, the odd number being at least three or higher; a readout circuit that reads data of 0 or 1 stored in the odd number of memory regions; a comparison circuit that compares readout data at corresponding addresses of the odd number of memory regions, and decides comparison data of 0 or 1 according to voting; and a write circuit that writes the comparison data in one region in the odd number of memory regions.

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