Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-14
2005-06-14
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S310000
Reexamination Certificate
active
06906365
ABSTRACT:
A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode8and a degradation preventive layer at the boundary of ferroelectric layer7/electrodes6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer7/upper electrode8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.
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Horikoshi Kazuhiko
Kato Hisayuki
Ogata Kiyoshi
Suenaga Kazufumi
Yamazaki Masahito
Fenty Jesse A.
Thomas Tom
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