Ferroelectric memory device in which the channel region has the

Details Ferroelectric memory device in which the channel region has the Ferroelectric memory device in which the channel region has the

1998-07-08

2000-04-11

Mai, Son

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, G11C 1122

Patent

active

060494778

ABSTRACT:
A ferroelectric memory device includes a channel region formed in a substrate having a first conductivity type, a first diffusion region formed in the substrate at a first side of the channel region with a second, opposite conductivity type, a second diffusion region formed in the substrate at a second side of said channel region with the second conductivity type, a ferroelectric film formed on the substrate so as to cover the channel region, and a gate electrode provided on the ferroelectric film, wherein the channel region has the second conductivity type.

REFERENCES:
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patent: 5365094 (1994-11-01), Takasu
patent: 5449935 (1995-09-01), Nakamura
patent: 5523964 (1996-06-01), McMillan
patent: 5623439 (1997-04-01), Gotoh et al.
patent: 5633821 (1997-05-01), Nishimura
patent: 5768185 (1998-06-01), Nakamura
patent: 5877977 (1999-03-01), Essaian
Prins M W J et al: "Depletion-Type Thin-Film Transistors With A Ferroelectric Insulator" Applied Physics Letters, vol. 70, No. 4, Jan. 27, 1997, pp. 458-460, XP000680623 (p. 459, col. 1, line 5--line 9; figure 2).
Yukio Watanabe: "Epitaxial All-Perovskite Ferroelectric Field Effect Transistor With A Memory Retention" Applied Physics Letters, vol. 66, No. 14, Apr. 3, 1995, pp. 1770-1772, XP000500955 (figure 1).

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