Ferroelectric memory device having ferroelectric capacitor...

Details Ferroelectric memory device having ferroelectric capacitor... Ferroelectric memory device having ferroelectric capacitor...

2006-03-21

2006-03-21

Robinson, Daniel (Department: 3742)

Static information storage and retrieval

Systems using particular element

Ferroelectric

Reexamination Certificate

active

07016216

ABSTRACT:
A ferroelectric memory device includes memory cells, a memory cell block, a sense amplifier, a precharge circuit, a bit line drive circuit, and a plate line drive circuit. Each of the memory cells has a cell transistor and a ferroelectric capacitor in between a source and drain of the cell transistor. The memory cell block includes the memory cells that are series connected between a bit line via a block select transistor and a plate line. The sense amplifier amplifies data read out from the memory cell, and generates one of a first potential and a second potential higher than the first potential in accordance with the read-out data. The precharge circuit precharges the bit line at a third potential that is higher than the first potential and lower than the second potential. The bit line drive circuit sets the bit line at a fourth potential.

REFERENCES:
patent: 5761109 (1998-06-01), Takashima et al.
patent: 5903492 (1999-05-01), Takashima
patent: 6094370 (2000-07-01), Takashima
patent: 6198654 (2001-03-01), Ashikaga
patent: 6229728 (2001-05-01), Ono et al.
patent: 6262910 (2001-07-01), Takata et al.
patent: 6320782 (2001-11-01), Takashima
patent: 6388915 (2002-05-01), Kato et al.
patent: 6473331 (2002-10-01), Takashima
patent: 6487104 (2002-11-01), Takashima
patent: 6493251 (2002-12-01), Hoya et al.
patent: 9-82083 (1997-03-01), None
patent: 10-255483 (1998-09-01), None
patent: 2002-93153 (2002-03-01), None
patent: 2002-170382 (2002-06-01), None

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