Ferroelectric memory device having fatigue averaging

Details Ferroelectric memory device having fatigue averaging Ferroelectric memory device having fatigue averaging

1998-06-23

1999-11-02

Mai, Son

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

059782528

ABSTRACT:
A nonvolatile semiconductor memory device using a ferroelectric memory includes memory cells having two ferroelectric capacitors and two MOS transistors. The memory device includes a switching circuit that reverses the polarity, or sign, of data when previously-read data is written back into the memory cell. A toggle bit memory stores a toggle bit representing the sign of the data that was switched by the switching circuit. The semiconductor memory device has a resetting circuit that returns the reversed-sign data to its normal state using the switching circuit, based on the data read from the memory cell and the toggle bit read from the toggle bit memory.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5218566 (1993-06-01), Papaliolios
patent: 5237533 (1993-08-01), Papaliolios
patent: 5487032 (1996-01-01), Mihara et al.
patent: 5745403 (1998-04-01), Taylor

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