Ferroelectric memory device having a reference voltage...

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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Details

C365S117000, C365S149000, C365S189090

Reexamination Certificate

active

11014117

ABSTRACT:
A ferroelectric memory device includes a plurality of memory cells, each memory cell includes a ferroelectric capacitor and a transistor, a plate line drive unit capable of providing a first voltage to the memory cell array in response to a plate line drive signal, and a reference voltage generating device. The reference voltage generating includes a reference cell block having a plurality of reference cells, each reference cell including a ferroelectric capacitor and a transistor, and a reference plate line drive to provide a reference plate line voltage to at least one reference cell in response to a plate line drive signal and a reference voltage generation signal, where each reference cell generates a reference voltage in response to the reference plate line voltage.

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patent: 6078530 (2000-06-01), Choi
patent: 6452829 (2002-09-01), Yamada
patent: 6574133 (2003-06-01), Takashima

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