Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-03
2006-01-03
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S310000, C257S311000
Reexamination Certificate
active
06982444
ABSTRACT:
There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
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International Symposium on Integrated Ferroelctrics 99, ABSTRACTS, Hiroyuki Kanaya, et al., “Hydrogen-induced Imprint Mechanism of Pt/PZT/Pt Capacitor by Low-temperature Hydrogen Treatment”, Mar. 7-10, 1999, p. 113C.
Iwamoto Tsuyoshi
Kanaya Hiroyuki
Kumura Yoshinori
Kunishima Iwao
Mochizuki Hiroshi
Banner & Witcoff , Ltd.
Hu Shouxiang
Kabushiki Kaisha Toshiba
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