Ferroelectric memory device, electronic device

Details Ferroelectric memory device, electronic device Ferroelectric memory device, electronic device

2007-04-24

2007-04-24

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

11174905

ABSTRACT:
A ferroelectric memory device including a pair of main bit lines (MBLU1, MBLL1) having generally identical line width and line length, a sense amplifier (SA) that lies between one of the main bit lines and the other of the main bit lines, a plurality of local bit lines (LBLU1, etc.) associated with each of the main bit lines, a plurality of switching elements (TrU1, etc.), each provided between each of the local bit lines and the main bit line, a plurality of memory cells (MCU1, etc.), and a plurality of dummy cells (DMC1, etc.) for generating a reference potential, wherein one of the main bit lines is connected to one of the local bit lines to readout data from one of the memory cells connected to the one of the local bit lines, and the dummy cell connected to the other of the main bit lines is selected to generate a reference potential.

REFERENCES:
patent: 5455786 (1995-10-01), Takeuchi et al.
patent: 6574135 (2003-06-01), Komatsuzaki
patent: 10-125076 (1998-05-01), None

Affiliated with

Also associated with

Rating

Ferroelectric memory device, electronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory device, electronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory device, electronic device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3767217