Ferroelectric memory device comprising extended memory unit

Details Ferroelectric memory device comprising extended memory unit Ferroelectric memory device comprising extended memory unit

2005-06-14

2005-06-14

Tran, M. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230030

Reexamination Certificate

active

06906943

ABSTRACT:
A ferroelectric memory device including an extended memory unit features a cell array block, a data bus unit, an input/output circuit unit, an extended memory unit and an extended memory controller. The cell array block includes a main bitline and a plurality of sub bitlines. The main bitline is connected between a main bitline pull-up controller and a column selection controller, and each sub bitline is connected to the main bitline and a unit cell. The data bus unit is connected to the column selection controller. The input/output circuit unit includes a sense amplifier array connected to the data bus unit. The extended memory unit shares the main bitline included in the cell array block and includes a plurality of cell blocks. The extended memory controller controls the extended memory unit in response to an external control signal.

REFERENCES:
patent: 6215692 (2001-04-01), Kang

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