Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-08-23
2005-08-23
Phan, Trong (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
06934177
ABSTRACT:
A nonvolatile ferroelectric memory device is disclosed, which includes a cell block which includes a series-connection of a plurality of unit cells each having a ferroelectric capacitor with its both ends connected to the source and drain of a cell transistor, a pair of bit lines to which both ends of the cell block are connected through block select gates respectively, word lines each connected to the gate of a corresponding cell transistor of the cell block, a plate line to which a node of a unit cell at a specified position within the cell block is connected via a plate-line select gate, and a sense amplifier having differential input terminals which are connected to the paired bit lines respectively.
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D. Takashima et al., “High-Density Chain Ferroelectric Random-Access Memory (CFRAM),” in Proc. VLSI Symp. Jun. 1997, pp. 83-84.
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