Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-02-13
2011-12-13
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000
Reexamination Certificate
active
08076706
ABSTRACT:
A ferroelectric memory device includes: a substrate; a first insulating film formed above the substrate, the first insulating film including a plug; a ferroelectric capacitor formed above the first insulating film; the ferroelectric capacitor including a lower electrode formed above the plug, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film; a hydrogen barrier film formed on the ferroelectric capacitor, a first thickness of the hydrogen barrier film formed on the upper electrode being greater than a second thickness of the hydrogen barrier film formed on a side surface of the ferroelectric capacitor; and the hydrogen barrier film including a first hydrogen barrier film and the second hydrogen barrier film, the first hydrogen barrier film formed on an upper surface of the upper electrode and a side surface of the upper electrode, the second hydrogen barrier film formed above the ferroelectric capacitor.
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Patent Abstracts of Japan for JP 2001-044375.
Tagawa Teruo
Tamura Hiroaki
Harness & Dickey & Pierce P.L.C.
Nguyen Cuong Q
Seiko Epson Corporation
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