Ferroelectric memory device and method of manufacture of same

Details Ferroelectric memory device and method of manufacture of same Ferroelectric memory device and method of manufacture of same

2006-03-31

2008-08-05

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104, C257S379000, C438S003000

Reexamination Certificate

active

07408213

ABSTRACT:
A ferroelectric memory device has a lower insulating film formed on a semiconductor substrate. A ferroelectric capacitor structure is formed on the lower insulating film. The ferroelectric capacitor structure is created by layering in order a lower electrode, ferroelectric layer and upper electrode. The ferroelectric memory device also has an upper insulating film which covers the ferroelectric capacitor structure. A wiring layer is formed over the upper insulating film. An aluminum oxide film of thickness 5 to 50 nm is formed so as to cover the wiring layer and upper insulating film.

REFERENCES:
patent: 2001/0020708 (2001-09-01), Kasai
patent: 2004/0084701 (2004-05-01), Kanaya et al.
patent: 2005/0101034 (2005-05-01), Aggarwal et al.
patent: 2007/0134924 (2007-06-01), Yaegashi
patent: 2002-043541 (2002-02-01), None
patent: 2003-100994 (2003-04-01), None
patent: 2004-023043 (2004-01-01), None

Affiliated with

Also associated with

Rating

Ferroelectric memory device and method of manufacture of same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory device and method of manufacture of same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory device and method of manufacture of same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3999152