Ferroelectric memory device and method for fabricating the same

Details Ferroelectric memory device and method for fabricating the same Ferroelectric memory device and method for fabricating the same

2005-11-08

2005-11-08

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000

Reexamination Certificate

active

06963095

ABSTRACT:
The ferroelectric memory device has a plurality of capacitor elements each formed on a semiconductor substrate and composed of a lower electrode, a capacitor insulating film made of a ferroelectric material formed on the lower electrode, and an upper electrode formed on the capacitor insulating film. Each of the lower electrodes is buried in a burying insulating film to have an upper surface planarized relative to the upper surface of the burying insulating film and has a plane configuration such that the distance from an arbitrary position on the upper surface of the lower electrode to the nearest end portion thereof is 0.6 μm or less.

REFERENCES:
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 6171910 (2001-01-01), Hobbs et al.
patent: 6323132 (2001-11-01), Hwang et al.
patent: 6339008 (2002-01-01), Takenaka
patent: 2000-138349 (2000-05-01), None

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