Ferroelectric memory device and manufacturing method thereof

Details Ferroelectric memory device and manufacturing method thereof Ferroelectric memory device and manufacturing method thereof

2006-05-26

2009-08-18

Coleman, W. David (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27104, C257SE21664, C438S003000

Reexamination Certificate

active

07576377

ABSTRACT:
A ferroelectric memory device includes a semiconductor substrate, a first insulating film, a plurality of first and second plugs which extend through the first insulating film, conductive hydrogen barrier films, ferroelectric capacitor structural bodies, a first insulating hydrogen barrier film provided so as to cover the ferroelectric capacitor structural bodies, a second insulating film, local wirings extending on the second insulating film, a second insulating hydrogen barrier film which covers the local wirings, a third insulating film, third plugs which extend through the third insulating film so as to connect to their corresponding conductive hydrogen barrier films, and a first wiring layer extending on the third insulating film.

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