Ferroelectric memory device and electronic device

Details Ferroelectric memory device and electronic device Ferroelectric memory device and electronic device

2007-04-03

2007-04-03

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

10980979

ABSTRACT:
A ferroelectric memory is provided including a ferroelectric capacitor having an end electrically coupled to a bit line; a power source generating a predetermined voltage; a resistance formed between the bit line and the power source; and a switch installed in series with the resistor, and switching whether a predetermined voltage is applied to the bit line via the resistor or not. The voltage source preferably generates a driving voltage driving the ferroelectric memory, a voltage between the resistive voltage of the ferroelectric capacitor and the driving voltage driving the ferroelectric memory, or a voltage that is less than the coercive voltage of the ferroelectric capacitor.

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English translation of “Communication from Japanese Patent Office re: counterpart application” submitted on IDS filed by Applicant on May 10, 2005.
Communication from Japanese Patent Office re: counterpart application.

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