Ferroelectric memory device and electronic apparatus

Details Ferroelectric memory device and electronic apparatus Ferroelectric memory device and electronic apparatus

2007-08-31

2009-08-04

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S205000, C365S189090

Reexamination Certificate

active

07570506

ABSTRACT:
A ferroelectric memory device includes: a first p-channel type MISFET connected between a first bit line and a first node; a second p-channel type MISFET connected between a second bit line and a second node; a first negative potential generation circuit connected to the first node; and a second negative potential generation circuit connected to the second node, wherein a gate terminal of the first p-channel type MISFET and the second node are connected to each other, and a gate terminal of the second p-channel type MISFET and the first node are connected to each other.

REFERENCES:
patent: 6233170 (2001-05-01), Yamada
patent: 6487103 (2002-11-01), Yamamoto et al.
patent: 6650158 (2003-11-01), Eliason
patent: 6934214 (2005-08-01), Fujisawa et al.
patent: 7088605 (2006-08-01), Lin
patent: 2000-187990 (2000-07-01), None
patent: 2002-133857 (2002-05-01), None
“Bitline GND Sensing Technique for Low-Voltage Operation FeRAM”; IEEE Journal of Solid State Circuits, vol. 37. No. 5., May 2002.

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