Ferroelectric memory device and data read method in same

Details Ferroelectric memory device and data read method in same Ferroelectric memory device and data read method in same

2006-08-29

2010-02-16

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S211000

Reexamination Certificate

active

07663905

ABSTRACT:
A ferroelectric memory device includes a memory cell, read circuit, temperature sensing circuit, and read controller. The memory cell includes a ferroelectric capacitor. The read circuit is configured to read data from the memory cell. The temperature sensing circuit is configured to sense the ambient temperature of the memory cell. The read controller is configured to receive a temperature sensing signal from the temperature sensing circuit, and inhibit a data read operation by the read circuit when the temperature sensed by the temperature sensing circuit is higher than a preset temperature.

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Notification of Reasons for Rejection for Application No. 2006-061445, Japanese Patent Office, mailed Feb. 26, 2008.
Eaton et al., “A Ferroelectric Nonvolatile Memory”, IEEE International Solid State Circuit Conference, Digest of Technical Papers, pp. 130, 131 and 329, (1988).

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