Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

1996-08-01

1997-10-07

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365190, G11C 1112

Patent

active

056755309

ABSTRACT:
In a ferroelectric memory device comprising a ferroelectric capacitor as the memory cell capacitor, after applying a predetermined electric field to a main body memory cell capacitor C0 or C1 to conduct a writing operation, the electric field applied to the memory cell capacitor C0 or C1 is made zero. The operation is conducted so as not to apply an electric field on the ferroelectric capacitor. As a consequence, characteristic deterioration of the ferroelectric capacitor can be reduced to prevent the malfunction of the ferroelectric memory device.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5430671 (1995-07-01), Hirano et al.
patent: 5455786 (1995-10-01), Takeuchi et al.
patent: 5467302 (1995-11-01), Hirano et al.

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