Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

1994-09-29

1996-06-25

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365141, 257295, G11C 1122

Patent

active

055306675

ABSTRACT:
A ferroelectric memory device according to the present invention includes memory cells. Each memory cell is constructed such that a lower electrode is formed on a silicon substrate, a ferroelectric capacitor having a hysteresis characteristic with at least two non-linear characteristic portions is formed on the lower electrode, and an upper electrode is formed on the ferroelectric capacitor. The memory cells are arranged in a matrix and are provided with a column switching controller and a row switching controller. These controllers are connected via a switching circuit to a write circuit, a read circuit and a detector. When a voltage lower than a coercive voltage is applied to the memory cells, the data storage states of the memory cells are discriminated on the basis of the difference in differential dielectric constants between "1" and "0", thus reading out the data in a non-destructive manner. In the ferroelectric memory device with this structure, an asymmetrical amplitude waveform voltage of a positive voltage lower than a coercive voltage and a negative voltage of an amplitude smaller than the amplitude of the positive voltage is applied to the ferroelectric film on which data is recorded, thereby reading out the data in a non-destructive manner.

REFERENCES:
patent: 4360896 (1982-11-01), Brody
patent: 5060191 (1991-10-01), Nagasaki et al.
patent: 5099305 (1992-03-01), Takenaka
patent: 5151877 (1992-09-01), Brennan
"The Physics of Ferroelectric Memories"; Scott et al, Mol Electron; pp. 206-214 (1987).
Journal of the Physical Society of Japan, vol. 54, No. 1, Jan. 1985; pp. 2-3-210, K. Aizu; "Thermodynamical Theory of Equisymmetric Ferroic-to Ferroic Transitions".

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