Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2006-12-27

2008-12-02

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S210100

Reexamination Certificate

active

07460390

ABSTRACT:
When reading first memory cell data in a ferroelectric memory device, voltage on first bit lines changes. Therefore, controllers turn on first transistors in first read-out voltage generators based on the first bit line voltage, and control the first transistors' channel resistance. When the first transistors turn on, the pre-charged drain voltage lowers and the first read-out voltage generators output the lowered voltage as the first memory cell data's voltage. When reading second memory cell data, a second read-out voltage generator outputs a second transistor's drain voltage that is lowered based on the data as the second memory cell data's voltage. When the second read-out voltage generator outputs the read-out voltage, a reference voltage generator generates a reference voltage equal to the read-out voltage. Because the reference voltage generator has a higher voltage supply capacity than the second read-out voltage generator, the reference voltage is supplied to sense amplifiers.

REFERENCES:
patent: 6426906 (2002-07-01), Igarashi
patent: 6487103 (2002-11-01), Yamamoto et al.
patent: 7154768 (2006-12-01), Chen et al.
patent: 2002-157876 (2002-05-01), None

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