Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2007-01-30

2007-01-30

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S257000, C257SE21008, C257S663000

Reexamination Certificate

active

10780572

ABSTRACT:
A ferroelectric memory device of the present invention includes a memory cell array in which memory cells are arranged in a matrix having first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and a ferroelectric layer disposed at least in intersection regions between the first signal electrodes and the second signal electrodes, and a peripheral circuit section for selectively writing information into or reading information from the memory cell. The memory cell array and the peripheral circuit section are formed in different layers. The peripheral circuit section is formed in a region outside the memory cell array.

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