Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-09
2007-01-09
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S181000
Reexamination Certificate
active
10701174
ABSTRACT:
It is an object of the present invention to provide a laser irradiation apparatus being able to crystallize the semiconductor film homogeneously while suppressing the variation of the crystallinity in the semiconductor film and the unevenness of the state of the surface thereof. It is another object of the present invention to provide a method for manufacturing a semiconductor device using the laser irradiation apparatus which can suppress the variation of on-current, mobility, and threshold of TFT, and to further provide a semiconductor device manufactured with the manufacturing method.A method for manufacturing a semiconductor device comprising the steps of adding the first noble gas to the semiconductor film formed over the insulating surface with the ion doping method and irradiating the semiconductor film with the first noble gas added therein with the laser light in an atmosphere of second noble gas, wherein the magnetic field is applied to the semiconductor film with the first noble gas added when the laser light is irradiated.
REFERENCES:
patent: 5643801 (1997-07-01), Ishihara et al.
patent: 5897799 (1999-04-01), Yamazaki et al.
patent: 5900980 (1999-05-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5953597 (1999-09-01), Kusumoto et al.
patent: 5959779 (1999-09-01), Yamazaki et al.
patent: 6002523 (1999-12-01), Tanaka
patent: 6022458 (2000-02-01), Ichikawa
patent: 6038075 (2000-03-01), Yamazaki et al.
patent: 6071796 (2000-06-01), Voutsas
patent: 6429097 (2002-08-01), Voutsas et al.
patent: 6544825 (2003-04-01), Yamazaki
patent: 6548370 (2003-04-01), Kasahara et al.
patent: 2003/0129790 (2003-07-01), Yamazaki et al.
patent: 2004/0069751 (2004-04-01), Yamazaki et al.
patent: 2004/0087116 (2004-05-01), Nakayama
patent: 2004/0119955 (2004-06-01), Tanaka
patent: 2004/0171237 (2004-09-01), Tanaka et al.
patent: 2004/0259387 (2004-12-01), Yamazaki et al.
patent: 61-187223 (1986-08-01), None
patent: 63-096908 (1988-04-01), None
patent: 07-183540 (1995-07-01), None
patent: 07-187890 (1995-07-01), None
patent: 2000/138180 (2000-05-01), None
patent: 2000/182956 (2000-06-01), None
patent: 2000/294793 (2000-10-01), None
patent: 2004-039890 (2004-02-01), None
patent: 2004-179356 (2004-06-01), None
patent: 2004-289140 (2004-10-01), None
U.S. Appl. No. 10/700,516 (Official filing receipt; Specification with Verification of Translation, claims and figures 1-11.), Dec. 23, 2004.
Nakamura Osamu
Shoji Hironobu
Yamazaki Shunpei
Costellia Jeffrey L.
Lee Hsien-Ming
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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