Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2007-07-03

2007-07-03

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S145000, C365S042000

Reexamination Certificate

active

10867812

ABSTRACT:
A ferroelectric memory device has a high performance, includes no Pb, and can be directly mounted onto an Si substrate. The ferroelectric memory device includes a (001)-oriented BiFeO3ferroelectric layer5with a tetragonal structure, which is formed on an electrode4made of a perovskite material formed on an Si oxide film. The electrode4with a perovskite structure is formed by an ion beam assist method.

REFERENCES:
patent: 5912068 (1999-06-01), Jia
patent: 6312819 (2001-11-01), Jia et al.
patent: 2004/0036571 (2004-02-01), Chen et al.
patent: A 2001-210794 (2001-08-01), None
Wang et al., “Epitaxial BiFeO3Multiferroic Thin Film Heterostructures,” Science, vol. 299, pp. 1719-1722, Mar. 14, 2003.

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