Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1999-11-23
2000-11-07
Mai, Son
Static information storage and retrieval
Systems using particular element
Ferroelectric
36518501, 257295, G11C 1122, G11C 1604
Patent
active
061445797
ABSTRACT:
A ferroelectric memory device includes a channel region formed in a substrate having a first conductivity type, a first diffusion region formed in the substrate at a first side of the channel region with a second, opposite conductivity type, a second diffusion region formed in the substrate at a second side of said channel region with the second conductivity type, a ferroelectric film formed on the substrate so as to cover the channel region, and a gate electrode provided on the ferroelectric film, wherein the channel region has the second conductivity type.
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Prins M W J et al.: "Depletion-Type Thin-Film Transistors With a Ferroelectric Insulator" Applied Physics Letters, vol. 70, No. 4, Jan. 27, 1997, pp. 458-460, XP000680623 (p. 459, col. 1, line 5-line 9, figure 2).
Yukio Watanabe: "Epitaxial All-Perovskite Ferroelectric Field Effect Transistor With a Memory Retention" Applied Physics Letters, vol. 66, No. 14, Apr. 3, 1994, pp. 1770-1772, XP000500955 (figure 1).
Fujitsu Limited
Mai Son
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