Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2007-05-08

2007-05-08

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000

Reexamination Certificate

active

11216078

ABSTRACT:
To provide a nondestructive-read ferroelectric memory capable of realizing high speed, high integration, and long service life.The present invention is provided with an MFSFET100having a ferroelectric thin film at its gate portion, word line104, bit line105, and bit line106so as to apply voltage equal to or higher than the coercive electric field of the ferroelectric thin film between the bit line105and the word line104at first write timing and apply voltage equal to or higher than the coercive electric field between the bit line106and the word line104at second write timing, and applies voltage equal to or lower than the coercive electric field of the ferroelectric thin film between the bit line105and the word line104at first read timing to detect the current flowing between the both bit lines, and applies voltage equal to or lower than the coercive electric field between the bit line106and the word line104at second read timing to detect the current flowing between the both bit lines.

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