Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2006-08-15

2006-08-15

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000, C365S202000, C365S210130, C365S206000

Reexamination Certificate

active

07092274

ABSTRACT:
A ferroelectric memory device includes a memory cell array having memory cells arranged in a matrix form. Each of the memory cells includes a cell transistor and a ferroelectric capacitor. It further includes a first dummy bit line arranged outside a bit line arranged on an end portion of the memory cell array and separated from the bit line arranged on the end portion of the memory cell array with an interval which is the same as a pitch between the bit lines in the memory cell array and having the same width as the bit line, and a first dummy memory cell connected to the first dummy bit line and having the same structure as the memory cell.

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