Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2006-01-10

2006-01-10

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S063000, C365S149000

Reexamination Certificate

active

06985374

ABSTRACT:
A ferroelectric memory device including a memory cell array region having reduced influence of disturbance noise and divided into row blocks for every sub-bitline subordinate to main bitlines. One end of each sub bitline is connected to the main bitline through a first sub bitline select switch. The other end of the sub bitline is connected to a common potential supply line through a second sub-bitline select switch which is turned on complementarily with the first sub-bitline select switch.

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