Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2005-05-10

2005-05-10

Tran, M. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S147000

Reexamination Certificate

active

06891741

ABSTRACT:
A ferroelectric memory device includes a simple matrix type memory cell array. Provided that the maximum absolute value of a voltage applied between a first signal electrode and a second signal electrode is Vs, polarization P of a ferroelectric capacitor formed of the first electrode, the second electrode, and ferroelectric layer is within the range of 0.1P(+Vs)<P(−1/3Vs) when the applied voltage is changed from +Vs to −1/3Vs, and 0.1P(−Vs)>P(+1/3Vs) when the applied voltage is changed from −Vs to +1/3Vs.

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U.S. patent application Ser. No. 10/026,903, Hasegawa et al., filed Dec. 27, 2001.

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