Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2008-07-29

2008-07-29

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000

Reexamination Certificate

active

07405959

ABSTRACT:
A ferroelectric memory device includes memory cells using ferroelectric capacitors provided at intersections of local bit lines associated with a main bit line and word lines. The ferroelectric memory device includes: first and second local bit lines associated with a first main bit line; first and second connection transistors for connecting the first and second local bit lines to the first main bit line; first and second grounding transistors for grounding the first and second local bit lines; a first selection line that is commonly connected to gates of the first grounding transistor and the second connection transistor; and a second selection line that is commonly connected to gates of the first connection transistor and the second grounding transistor.

REFERENCES:
patent: 2004/0047172 (2004-03-01), Komatsuzaki
patent: 2005/0024915 (2005-02-01), Kang
patent: 2005/0135141 (2005-06-01), Kang
patent: 2005/0207203 (2005-09-01), Kang
patent: 2001-167591 (2001-06-01), None

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