Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

2011-06-21

2011-06-21

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S065000, C365S149000, C365S225700

Reexamination Certificate

active

07965536

ABSTRACT:
According to an aspect of the present invention, there is provided a ferroelectric memory device including: a cell unit including: a first select transistor having a first source, a first drain, and a first gate, one of the first source and the first drain being connected to a bit line; and a memory cell unit having a plurality of first memory cells, each of the first memory cells including a first ferroelectric capacitor and a first memory transistor; and a ferroelectric memory fuse including: a second select transistor having a second source, a second drain, and a second gate connected to a second select line, one of the second source and the second drain being connected to one end of the bit line; and a memory fuse unit having a plurality of second memory cells, each of the second memory cells including a second ferroelectric capacitor and a second memory transistor.

REFERENCES:
patent: 5903492 (1999-05-01), Takashima
patent: 6094370 (2000-07-01), Takashima
patent: 6320782 (2001-11-01), Takashima
patent: 6473331 (2002-10-01), Takashima
patent: 6657882 (2003-12-01), Takashima
patent: 7102908 (2006-09-01), Thomas et al.
patent: 7269048 (2007-09-01), Takashima
patent: H03-162798 (1991-07-01), None
patent: 2006-134529 (2006-05-01), None
Hidehiro Shiga et al., “A 1.6GB/s DDR2 128Mb Chain FeRAM with Scalable Octal Bitline and Sensing Schemes”, ISSCC Dig Tech Papers. pp. 464-465, Feb. 2009.
Explanation of Non-English Language References.

Affiliated with

Also associated with

Rating

Ferroelectric memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ferroelectric memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2704108