Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

1991-11-08

1993-03-30

Dixon, Joseph L.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365184, 365185, 257295, G11C 1122, H01L 2934

Patent

active

051989948

ABSTRACT:
A nonvolatile semiconductor memory including multiple memory cells. Each memory cell comprises a FET TM having a ferroelectric insulation film and two MOS transistors T1 and T2 connected in series to the ends of the source-drain path of the FET, respectively. To write data into a memory cell, an electric field is applied in a predetermined direction between the gate and the substrate of the transistor TM. The electric field polarizes the gate insulation film of the transistor TM, which is made of ferroelectric material, in the direction, thereby writing data into the memory cell. In a data read mode, if the transistor TM is on, a current flows through the transistor TM, and the potential of a bit line to which the transistor TM is coupled decreases. In contrast, if the transistor TM is off, no currents flow through this transistor TM, and the potential of the bit line to which the transistor TM is coupled remains unchanged. Thus, the data stored n the memory cell can be discriminated by detecting whether the potential of the bit line corresponds to a "1" bit or a "0" bit.

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