Ferroelectric memory device

Details Ferroelectric memory device Ferroelectric memory device

1995-05-12

1997-04-22

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

257295, 257 39, 257 77, 257 78, H01L 2978

Patent

active

056234392

ABSTRACT:
A ferroelectric memory device includes a channel layer of a dielectric material containing oxygen, source and drain electrode provided on the channel layer across a channel region defined in the channel layer, a ferroelectric memory layer provided on the channel layer so as to cover at least the channel region, and a write control electrode provided on the ferroelectric memory layer for applying an electric field thereto.

REFERENCES:
patent: 5418389 (1995-05-01), Watanabe
patent: 5498888 (1996-03-01), Ozawa
Nikkei Microdevices, Nov. 1994, p. 53 Ferroelectric Memory .circle-solid. Cell Technology (and translation).

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