Ferroelectric memory cell with angled cell transistor active...

Details Ferroelectric memory cell with angled cell transistor active... Ferroelectric memory cell with angled cell transistor active...

2005-11-22

2005-11-22

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S303000, C257S306000

Reexamination Certificate

active

06967365

ABSTRACT:
Ferroelectric memory cells and fabrication methods are provided in which the memory cell comprises a ferroelectric capacitor in a capacitor layer above a semiconductor body, and a cell transistor with first and second source/drains formed in an active region of the semiconductor body. The active region extends along a first axis in the semiconductor body, and the cell includes a gate electrically coupled with a wordline structure that extends along a second axis, wherein the first axis and the second axis are oblique.

REFERENCES:
patent: 5198384 (1993-03-01), Dennison
patent: 6444542 (2002-09-01), Moise et al.
patent: 6790676 (2004-09-01), Cerva et al.
patent: 05029579 (1993-02-01), None

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