Ferroelectric memory cell and methods for fabricating the same

Details Ferroelectric memory cell and methods for fabricating the same Ferroelectric memory cell and methods for fabricating the same

2005-03-15

2005-03-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S303000

Reexamination Certificate

active

06867447

ABSTRACT:
Semiconductor devices and ferroelectric memory cells therefor are provided, where the cells include a ferroelectric capacitor with one or more corners, as well as a transistor. Conductive bitline structures are located near the corners of ferroelectric cell capacitors to facilitate increased memory cell density and/or to increase capacitor area within a given cell area. Methods are disclosed for fabricating semiconductor devices with ferroelectric memory cells, wherein bitline structures are located near one or more corners of the ferroelectric cell capacitors.

REFERENCES:
patent: 5198384 (1993-03-01), Dennison
patent: 6444542 (2002-09-01), Moise et al.
patent: 6710385 (2004-03-01), Takashima
patent: 6730950 (2004-05-01), Seshadri et al.

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