Ferroelectric memory cell and method of sensing and writing the

Details Ferroelectric memory cell and method of sensing and writing the Ferroelectric memory cell and method of sensing and writing the

1993-03-08

1995-07-11

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 65, 365149, 327 49, 327 51, G11C 1122

Patent

active

054327318

ABSTRACT:
A memory cell containing a ferroelectric capacitor the memory state of which is sensed by cycling the potential across the capacitor from zero, through an upper electric field point and back to zero. If the cell was residing in the upper permanent remnant polarization point, a low change in charge flow occurs and if the cell was residing in the lower permanent remnant polarization point, a low (near zero) change in charge flow occurs. This change in charge flow from a near zero value to a large amount allows a very accurate reference capacitor to be used for the comparison or sensing process.

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patent: 5031143 (1991-07-01), Jaffe, Jr.
patent: 5086412 (1992-02-01), Jaffe et al.
patent: 5218566 (1993-06-01), Papaliolios
patent: 5237533 (1993-08-01), Papaliolios

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