Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2008-06-19
2010-10-12
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S201000, C365S145000, C365S149000, C365S049130
Reexamination Certificate
active
07813193
ABSTRACT:
A method (300) of identifying failing bits in a ferroelectric memory device including at least one ferroelectric capacitor includes (302) writing same state data to the first capacitor, and (304) baking the first capacitor for a first specified period of time at a first selected temperature. A same state read (306) is performed on the first capacitor after the baking. Based on the results from the same state read, it is determined whether an error occurred. The first specified period of time can be from 10 minutes to 2 hours and the first selected temperature can be in a range from 85° C. to 150° C. A repair can be performed (310) to corrected detected errors. A related method (500) can detect imprinted bits using a same state write (502), followed by a relatively high temperature bake (504), then a same state read (506). An opposite state date write (508) is performed followed by a relatively low temperature bake (510), and then an opposite state data read (512) to identify opposite state error or imprint.
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Gertas John Lane
Katsushi Boku
Remack Keith A.
Rodriguez John Anthony
Brady W. James
Keagy Rose Alyssa
Nguyen Viet Q
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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