Ferroelectric memory automatically generating biasing pulse for

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365149, G11C 1122

Patent

active

056086679

ABSTRACT:
A semiconductor memory using cells with a ferroelectric capacitor having one plate connected to a bit line by a MISFET and another plate connected to a plate line. A plate line control signal is applied to a plate line of a selected row by a pulse generator. The pulse generator generates the plate line selecting signal with a predetermined pulse width after enabling a word line.

REFERENCES:
patent: 5414654 (1995-05-01), Kubota et al.
patent: 5432731 (1995-07-01), Kirsch et al.

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