Ferroelectric memory arrangement

Details Ferroelectric memory arrangement Ferroelectric memory arrangement

2008-03-25

2008-03-25

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000

Reexamination Certificate

active

11216678

ABSTRACT:
A ferroelectric memory arrangement having memory cells, in each of which a vertical ferroelectric storage capacitor, which includes vertical electrodes and a ferroelectric dielectric between the vertical electrodes, is connected to a select transistor, the ferroelectric dielectric a plurality of ferroelectric layers, between each of which is arranged an insulating separating layer.

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