Ferroelectric memory and writing method of therein

Details Ferroelectric memory and writing method of therein Ferroelectric memory and writing method of therein

1998-06-15

1999-12-14

Phan, Trong

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122, G11C 1124

Patent

active

060026081

ABSTRACT:
In a ferroelectric memory, a malfunction in which data are reversed at the time of writing after reading out of data is prevented. Using a transistor to short-circuit two common lines which are connected to a memory element, the two common lines are short-circuited at the preparing stage for writing new data, and thereby such a malfunction which occurs reversal of data owing to an electric potential difference between common lines is prevented.

REFERENCES:
patent: 4853893 (1989-08-01), Eaton, Jr. et al.
patent: 5629888 (1997-05-01), Saito et al.

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