Ferroelectric memory and screening method therefor

Details Ferroelectric memory and screening method therefor Ferroelectric memory and screening method therefor

1998-10-13

2000-04-04

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

365 65, 365201, 36523006, G11C 1122

Patent

active

060469269

ABSTRACT:
A ferroelectric memory has a memory cell screening test circuit connected to bit lines through switching transistors. In screening, at least one word line is selected, and data is simultaneously written in all memory cells connected to this word line. Since data is not restored after the rewrite, all FRAM cells can be screened under the same condition. By this circuit, a memory cell having a write failure according to the imprint characteristics inherent to the ferroelectric memory is screened.

REFERENCES:
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patent: 5229971 (1993-07-01), Kiryu et al.
patent: 5546342 (1996-08-01), Nakane et al.
patent: 5798964 (1998-08-01), Shimizu et al.
patent: 5901077 (1999-05-01), Nishimura
patent: 5912846 (1999-06-01), Taylor

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