Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1996-08-23
1998-05-12
Le, Vu A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365 45, G11C 1122
Patent
active
057516251
ABSTRACT:
A ferroelectric memory having a thin ferroelectric film sandwiched between a pair of electrodes as a memory cell includes a first pulse generating circuit for applying a first pulse having a voltage Ve higher than a coercive voltage Vc of the thin ferroelectric film to the memory cell, thereby forming a polarized state in a first direction of two states of polarization, a second pulse generating circuit for applying to the memory cell a second pulse having a voltage Vw whose polarity is opposite to a polarity of the first pulse applied by the first pulse generating circuit, thereby forming a partially polarized state containing both domains having polarization in the first direction and domains having polarization in a second direction opposite to the first direction, and an analog recording unit for performing analog recording by controlling the partially polarized state by using the second pulse generated by the second pulse generating circuit.
REFERENCES:
patent: 4890259 (1989-12-01), Simko
patent: 5262983 (1993-11-01), Brennan
patent: 5446688 (1995-08-01), Torimaru
patent: 5530667 (1996-06-01), Omura et al.
Le Vu A.
Olympus Optical Co,. Ltd.
LandOfFree
Ferroelectric memory and recording device using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ferroelectric memory and recording device using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferroelectric memory and recording device using the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-989366