Ferroelectric memory and operating method therefor, and...

Details Ferroelectric memory and operating method therefor, and... Ferroelectric memory and operating method therefor, and...

2005-08-16

2005-08-16

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S117000, C365S174000, C365S175000

Reexamination Certificate

active

06930906

ABSTRACT:
A ferroelectric memory capable of improving disturbance resistance in a non-selected memory cell includes a bit line, a word line arranged to intersect with the bit line, and a memory cell, which is arranged between the bit line and the word line an includes a ferroelectric capacitor and a diode serially connected to the ferroelectric capacitor. Thus, when a voltage in a range hardly feeding a current to the diode is applied to a non-selected cell in data writing or data reading, substantially no voltage is applied to the ferroelectric capacitor.

REFERENCES:
patent: 5361225 (1994-11-01), Ozawa
patent: 5926412 (1999-07-01), Evans et al.
Oyo Buturi, vol. 67, No. 11(1998) pp. 1286-1289.

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