Ferroelectric memory and operating method therefor

Details Ferroelectric memory and operating method therefor Ferroelectric memory and operating method therefor

2007-01-23

2007-01-23

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S228000

Reexamination Certificate

active

10304691

ABSTRACT:
A ferroelectric memory capable of improving disturbance resistance in a non-selected cell by increasing the ratio between voltages applied to ferroelectric capacitors of a selected cell and the non-selected cell respectively is obtained. This ferroelectric memory comprises a bit line, a word line arranged to intersect with the bit line and a memory cell including a switching element arranged between the bit line and the word line and turned on with a threshold voltage having a substantially identical absolute value with respect to either of positive and negative voltage application directions and a ferroelectric capacitor arranged between the bit line and the word line and serially connected to the switching element.

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patent: 03-108769 (1991-05-01), None
patent: 04-171758 (1992-06-01), None
patent: 7-106450 (1995-04-01), None
patent: 07-106450 (1995-04-01), None
patent: 9-91970 (1997-04-01), None
Office Action and English translation of Office Action for Japanese Application No. 2001-36657, dated Aug. 1, 2005.
Partial English Translation of JP4-171758, issued Jul. 18, 1992 in Japan.
Partial English Translation of JP3-108769 issued May 8, 1991 in Japan.
Partial English Translation of JP7-106450 issued Apr. 21, 1995 in Japan.

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