Ferroelectric memory and method of testing the same

Details Ferroelectric memory and method of testing the same Ferroelectric memory and method of testing the same

2005-09-13

2005-09-13

Phan, Trong (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06944046

ABSTRACT:
A ferroelectric memory comprising a plurality of memory cells each including a ferroelectric capacitor and a switch transistor, and operating in a test mode in which, after polarized data is written into the memory cell by applying a first electric potential difference between both electrodes of ferroelectric capacitors of the plurality of memory cells, and before reading of the polarized data from the memory cells is carried out, a second electric potential difference smaller than the first electric potential difference is applied between both the electrodes of the ferroelectric capacitors in a direction opposite to that at the time of writing the polarized data.

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Joseph M. Benedetto, et al., “Effects of operating conditions on the fast-decay component of the retained polarization in lead zirconate titanate thin films”, J.Appl Phys. 75 (1), Jan. 1, 1994.

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